The Electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06

https://doi.org/10.1143/JJAP.42.L625

The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.

Synthesis of complex plutonium oxides with alkaline-earth metals

; Nakajima, Kunihisa; Iwai, Takashi; Omichi, Toshihiko; *

JAERI-Research 95-027, 19 Pages, 1995/03

JAERI-Research-95-027.pdf:0.89MB

no abstracts in English

Electrical properties of cubic, stabilized, single ZrO-GdO crystals

T.Kang*; Nagasaki, Takanori; Igawa, Naoki; K.Il-Hium*; Ono, Hideo

Journal of the American Ceramic Society, 75(8), p.2297 - 2299, 1992/08

https://doi.org/10.1111/j.1151-2916.1992.tb04500.x

no abstracts in English

1MeV-electron irradiation induced defects in epitaxially grown 3C-SiC

Ito, Hisayoshi; Hayakawa, Naohiro; Nashiyama, Isamu*; *

JAERI-M 89-094, 13 Pages, 1989/07

JAERI-M-89-094.pdf:0.45MB

no abstracts in English